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Study on adhesion removal model in CMP SiO(2) ILD

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Indexed by:会议论文

Date of Publication:2009-01-01

Included Journals:CPCI-S

Volume:389-390

Page Number:475-480

Key Words:Silicon dioxide; Chemical-Mechanical Polishing (CMP); Slurry; adhesion removal

Abstract:In the process of CMP SiO(2) ILD, the nano-particle with high surface energy in slurry has an essential impact on the efficiency and quality of CMP. In this paper the mode of nano-particle on the surface of SiO(2) ILD is analysed and adhesion removal model corresponding to that is established. Through cycle polishing experiments, the change of nano-particle size and the state of particle surface before and after polishing is observed with TEM and Zeta potential analyzer, based on which the adhesion removal model is verified.

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