Release Time:2019-03-11  Hits:

Indexed by: Conference Paper

Date of Publication: 2009-01-01

Included Journals: CPCI-S

Volume: 389-390

Page Number: 475-480

Key Words: Silicon dioxide; Chemical-Mechanical Polishing (CMP); Slurry; adhesion removal

Abstract: In the process of CMP SiO(2) ILD, the nano-particle with high surface energy in slurry has an essential impact on the efficiency and quality of CMP. In this paper the mode of nano-particle on the surface of SiO(2) ILD is analysed and adhesion removal model corresponding to that is established. Through cycle polishing experiments, the change of nano-particle size and the state of particle surface before and after polishing is observed with TEM and Zeta potential analyzer, based on which the adhesion removal model is verified.