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Indexed by:会议论文

Date of Publication:2009-10-04

Included Journals:EI、CPCI-S、Scopus

Volume:1

Page Number:721-728

Key Words:Machining; Measurement; Nanotopography; Silicon Wafer; Simultaneous Double Side Grinding

Abstract:Nanotopograhphy on unpatterned silicon wafers is becoming a serious issue in IC fabrication, especially with the decreasing critical dimension. However, there are no review papers to summarize the literature on nanotopography in silicon wafer manufacturing. This paper reviews the literature on nanotopography in silicon wafer manufacturing. It first describes the significance and definition of nanotopography. It then presents the methods and principles of nanotopography measurement. It also discusses experimental investigations about the effects of simultaneous double side grinding process on nanotopography.