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Study on adhesion removal model in CMP SiO2 ILD

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Indexed by:期刊论文

Date of Publication:2009-01-01

Journal:Key Engineering Materials

Included Journals:EI、Scopus

Volume:389-390

Page Number:475-480

ISSN No.:10139826

Abstract:In the process of CMP SiO2 ILD, the nano-particle with high surface energy in slurry has an essential impact on the efficiency and quality of CMP. In this paper the mode of nano-particle on the surface of SiO 2 ILD is analysed and adhesion removal model corresponding to that is established. Through cycle polishing experiments, the change of nano-particle size and the state of particle surface before and after polishing is observed with TEM and Zeta potential analyzer, based on which the adhesion removal model is verified.

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