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Indexed by:期刊论文

Date of Publication:2011-03-01

Journal:Journal of Semiconductors

Included Journals:EI、ISTIC、Scopus

Volume:32

Issue:3

ISSN No.:16744926

Abstract:A model for calculating friction torque during the chemical mechanical polishing (CMP) process is presented, and the friction force and torque detection experiments during the CMP process are carried out to verify the model. The results show that the model can well describe the feature of friction torque during CMP processing. The research results provide a theoretical foundation for the CMP endpoint detection method based on the change of the torque of the polishing head rotational spindle. ? 2011 Chinese Institute of Electronics.