Bright luminescence in amorphous hydrogenated silicon-nitride quantum-dot films prepared by a special designed PECVD system
Release Time:2019-03-13 Hits:
Indexed by: Journal Article
Date of Publication: 2016-07-01
Journal: JOURNAL OF LUMINESCENCE
Included Journals: Scopus、EI、SCIE
Volume: 175
Page Number: 67-70
ISSN: 0022-2313
Key Words: Amorphous silicon-nitride; Quantum dot; Photoluminescence
Abstract: Amorphous hydrogenated silicon-nitride (alpha-SiNx:H) quantum-dot (QD) films were successfully deposited on Si substrates using a specially designed system of plasma enhanced chemical vapor deposition. The alpha-SiNx:H QD films exhibit strong visible photoluminescence (PL) with a tunable peak energy ranging from 3.26 to 2.52 eV, depending on the deposition pressure. The PL process was studied in terms of temperature-dependent and time-resolved PL spectra in comparison with the theoretical predication of the band-tail luminescence, and then the tunable PL spectra were assigned to the recombination of excitons in the localized states at the band tails of the alpha-SiNx:H QDs. (C) 2016 Elsevier B.V. All rights reserved.