Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2012-02-01

Journal: ACTA PHYSICA SINICA

Included Journals: ISTIC、PKU、SCIE

Volume: 61

Issue: 4

ISSN: 1000-3290

Key Words: Cu2O: N; band gap; density of states

Abstract: N-doped Cu2O films are deposited at different temperatures by sputtering a CuO target in the mixture of Ar and N-2. By the analysis of transmission spectra, it is found that the N-doped Cu2O films are changed into a direct allowed band-gap semiconductor and the optical band gap energy is enlarged to 2.52 +/- 0.03 eV for the films deposited at different temperatures. The first-principles calculations indicate that the energy band gap increase by 25%, which is in good agreement with the experimental result. The change from a direct forbidden band-gap transition to a direct allowed band-gap transition can be attributed to the occupation of 2p electrons of N at the top of valence band in the N-doped Cu2O film.