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Microwave Dielectric Properties with Optimized Mn-Doped Ba0.6Sr0.4TiO3 Highly Epitaxial Thin Films

Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2010-10-01

Journal: CRYSTAL GROWTH & DESIGN

Included Journals: Scopus、EI、SCIE

Volume: 10

Issue: 10

Page Number: 4221-4223

ISSN: 1528-7483

Abstract: Pure and Mn doped Ba0.6Sr0.4TiO3 (0.5%, 2%) (BST) thin films were epitaxially grown on the (001) LaAlO3 using pulsed laser deposition. Microstructural characterizations indicate that the as-grown thin films have excellent single crystalline quality and epitaxial nature with an atomically sharp interface and an interface relationship of [100](film)//[100](LAO) and (001)(film)//(001)(LAO). Microwave dielectric property measurements indicate that the additional Mn doping can significantly enhance the microwave dielectric properties of the BST films.

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