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Indexed by:期刊论文

Date of Publication:2010-10-01

Journal:CRYSTAL GROWTH & DESIGN

Included Journals:SCIE、EI、Scopus

Volume:10

Issue:10

Page Number:4221-4223

ISSN No.:1528-7483

Abstract:Pure and Mn doped Ba0.6Sr0.4TiO3 (0.5%, 2%) (BST) thin films were epitaxially grown on the (001) LaAlO3 using pulsed laser deposition. Microstructural characterizations indicate that the as-grown thin films have excellent single crystalline quality and epitaxial nature with an atomically sharp interface and an interface relationship of [100](film)//[100](LAO) and (001)(film)//(001)(LAO). Microwave dielectric property measurements indicate that the additional Mn doping can significantly enhance the microwave dielectric properties of the BST films.