Release Time:2019-03-10  Hits:

Indexed by: Journal Article

Date of Publication: 2008-01-01

Journal: SCRIPTA MATERIALIA

Included Journals: EI、SCIE

Volume: 58

Issue: 2

Page Number: 103-105

ISSN: 1359-6462

Key Words: CVD; carbon; dislocation; transmission electron microscopy

Abstract: A diamond film was deposited using a two-step process in which nitrogen is added during the second step. We compare the defects in {001} and {111} growth sectors from the two-steps: dislocation loops found in {001} growth sectors of the first step disappear in {001} growth sectors with N-doping, whereas the density of planar defects in {111} growth sectors strongly increases. It is suggested that N-doping stops vacancies from aggregating to form dislocation loops or vacancy clusters. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.