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Indexed by:期刊论文

Date of Publication:2008-01-01

Journal:SCRIPTA MATERIALIA

Included Journals:SCIE、EI

Volume:58

Issue:2

Page Number:103-105

ISSN No.:1359-6462

Key Words:CVD; carbon; dislocation; transmission electron microscopy

Abstract:A diamond film was deposited using a two-step process in which nitrogen is added during the second step. We compare the defects in {001} and {111} growth sectors from the two-steps: dislocation loops found in {001} growth sectors of the first step disappear in {001} growth sectors with N-doping, whereas the density of planar defects in {111} growth sectors strongly increases. It is suggested that N-doping stops vacancies from aggregating to form dislocation loops or vacancy clusters. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.