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论文类型：期刊论文

发表时间：2016-10-01

发表刊物：JOURNAL OF LUMINESCENCE

收录刊物：SCIE、EI、Scopus

卷号：178

页面范围：192-195

ISSN号：0022-2313

关键字：ZnO; Near-band-edge photoluminescence; Localized states in band tail

摘要：Highly epitaxial ZnO films deposited on c-plane sapphire substrate by pulsed laser deposition exhibited enhanced extraordinary spectral features in the near-band-edge region, which were studied in comparison with the annealed sample and the bulk ZnO crystal. Based on the characterization in structure and photoluminescence, the near-band-edge emission was assigned to the tail-state luminescence due to the exciton localization, which is different from the bound excitons, instead has the continuous density of states at the deeper levels, probably created by the defects, chemical disorders, and the lattice strains. (C) 2016 Elsevier B.V. All rights reserved.