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论文类型：期刊论文

发表时间：2015-11-25

发表刊物：SURFACE & COATINGS TECHNOLOGY

收录刊物：SCIE、EI、Scopus

卷号：282

页面范围：1-5

ISSN号：0257-8972

关键字：Os films; Magnetron sputtering; Mechanical properties; Resistivity

摘要：Micron-thick osmium films were deposited on quartz substrates with a pulsed -200 V bias using magnetron sputtering method. Application of similar to 100 nm Ti buffer layer resulted in successful deposition of as thick as similar to 3 mu m Os films. Structure and morphology of the films were studied in terms of X-ray diffraction, scanning electron microscopy and atomic force microscopy, and their dependence on the duty-ratio was revealed. The mechanical properties of the films, namely, the Young's modulus and the hardness, were studied and discussed in comparison with the measurement of Os bulk sample. The Os film was found to be similar to 40% harder than the bulk sample due to the internal stress and the refined grains. The thickness-dependent resistivity was determined to be rho = 13.0 + 1.74/t (mu Omega cm), where t is the film thickness in micron. (C) 2015 Elsevier B.V. All rights reserved.