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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：复旦大学
学位：博士
所在单位：物理学院
学科：凝聚态物理
办公地点：大连理工大学三束材料改性重点实验室1号楼203房间
联系方式：qyzhang@dlut.edu.cn 0411-84707930 转 13
电子邮箱：qyzhang@dlut.edu.cn
Optical properties of N-doped Cu2O films and relevant analysis with first-principles calculations
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论文类型：期刊论文
发表时间：2012-02-01
发表刊物：ACTA PHYSICA SINICA
收录刊物：SCIE、PKU、ISTIC
卷号：61
期号：4
ISSN号：1000-3290
关键字：Cu2O: N; band gap; density of states
摘要：N-doped Cu2O films are deposited at different temperatures by sputtering a CuO target in the mixture of Ar and N-2. By the analysis of transmission spectra, it is found that the N-doped Cu2O films are changed into a direct allowed band-gap semiconductor and the optical band gap energy is enlarged to 2.52 +/- 0.03 eV for the films deposited at different temperatures. The first-principles calculations indicate that the energy band gap increase by 25%, which is in good agreement with the experimental result. The change from a direct forbidden band-gap transition to a direct allowed band-gap transition can be attributed to the occupation of 2p electrons of N at the top of valence band in the N-doped Cu2O film.