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论文类型：期刊论文

发表时间：2012-02-01

发表刊物：ACTA PHYSICA SINICA

收录刊物：ISTIC、PKU、SCIE

卷号：61

期号：4

ISSN号：1000-3290

关键字：Cu2O: N; band gap; density of states

摘要：N-doped Cu2O films are deposited at different temperatures by sputtering a CuO target in the mixture of Ar and N-2. By the analysis of transmission spectra, it is found that the N-doped Cu2O films are changed into a direct allowed band-gap semiconductor and the optical band gap energy is enlarged to 2.52 +/- 0.03 eV for the films deposited at different temperatures. The first-principles calculations indicate that the energy band gap increase by 25%, which is in good agreement with the experimental result. The change from a direct forbidden band-gap transition to a direct allowed band-gap transition can be attributed to the occupation of 2p electrons of N at the top of valence band in the N-doped Cu2O film.