点击次数：

论文类型：期刊论文

发表时间：2008-04-14

发表刊物：VACUUM

收录刊物：SCIE、EI

卷号：82

期号：8

页面范围：847-851

ISSN号：0042-207X

关键字：ZrO2 films; rf magnetron sputtering; interfacial layer; oxygen transport

摘要：In this work, the interfacial layer growth for both as-deposited and annealed ZrO2 thin films on silicon is analyzed in detail by the high-resolution cross-sectional transmission electron microscope and spectroscopic ellipsometry. For as-deposited ZrO2/SiO2/Si, the thickness of a SiO2-like layer at the silicon interface was found to depend on the oxygen partial pressure during deposition. At oxygen partial pressure ratio of above 50% the interfacial silicon oxide thickness increased through oxygen diffusion through the ZrO2 film and silicon consumption at the interface. At oxygen partial pressure ratio in the range 7-50%, the visible growth of interfacial silicon oxide layer was not present. The interfacial layer for ZrO2/Si with optimal partial pressure (15%) during annealing at 600 degrees C was found to be the two-layer structure composed of the ZrSixOy overlayer and the SiOx downlayer. The formation of the interfacial layer is well accounted for diffusion mechanisms involving Si indiffusion and grain-boundary diffusion. (C) 2008 Elsevier Ltd. All rights reserved.