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发布时间：2019-03-11

论文类型：会议论文

发表时间：2010-08-02

收录刊物：Scopus、CPCI-S、EI

卷号：654-656

页面范围：1716-+

关键字：GaN; nitridation; glass substrate; PEMOCVD

摘要：Nitridation of Corning 7101 glass substrate and the following GaN deposition were carried out in a self-developed electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition (ECR-PEMOCVD) system equipped with in-situ reflection high-energy electron diffraction (RHEED) monitoring. RHEED pattern and X-Ray diffraction (XRD) spectrum showed that the nitridation can effectively improve the C-axis orientation of as-prepared GaN film. Atomic force microscope (AFM) analysis indicated that the average grain size increased significantly with 5 min of nitriding, but degraded as nitriding time increased. The optimum nitriding time was achieved as 5 min. The effect of nitridation on the GaN film deposition and its formation mechanism were discussed.