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氧化镁陶瓷的烧结工艺研究

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Indexed by: Journal Article

Date of Publication: 2010-04-15

Journal: 人工晶体学报

Included Journals: CSCD、ISTIC、PKU、EI

Volume: 39

Issue: 2

Page Number: 455-458,469

ISSN: 1000-985X

Key Words: MgO陶瓷;烧结温度;均相沉淀法

Abstract: 以硝酸镁、碳酸氢氨为原料,采用均相沉淀法制备碱式碳酸镁,经过不同温度煅烧制得MgO粉体,将粉体压制成型后,经不同温度下烧结,制备MgO陶瓷.TG-DTA、XRD和SEM分析结果表明:碱式碳酸镁的最佳煅烧温度为750 ℃左右,所制得的MgO粉体的晶粒大小为22.25 nm.MgO陶瓷最佳烧结温度为1500 ℃,所得到的陶瓷结构致密、气孔较少、收缩率较高、透光性最好.随着烧结温度的升高,MgO陶瓷中的晶粒有沿(200) 晶面择优生长的趋势.

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