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论文类型：会议论文

发表时间：2007-11-12

收录刊物：EI、CPCI-S

卷号：6838

关键字：Yb-Er co-doped Al2O3 waveguide amplifier; etched cross-section; mode field distribution; gain

摘要：Guiding modes and field distribution are calculated by finite element method. For three kinds of etched cross-section waveguide (rectangle, trapezoid, upside-down trapezoid) with 0.5 mu m and 1.0 mu m film thickness, mode characteristic, percentage of core power at wavelength of 1.53 mu m and 0.98 mu m and overlap factor between signal and pump are contrastively studied. For the same etched depth and mask width, trapezoid waveguide is superior to rectangle and then upside-down trapezoid in the view of field confinement and overlap factor. Whereas rectangle waveguide is optimum and upside-down trapezoid is the worst for the same core cross-section area. The gain of different etched cross-section waveguide amplifier is numerically calculated by multi-theoretical model, which is founded by rate equations pumped at 0.98 mu m, two-dimension waveguide finite element model, propagation equations with forward and backward direction amplified spontaneous emission. Results also show rectangle waveguide is optimum for the same core cross-section area. The gain of 1 mu m film thickness waveguide amplifier increases by more than 20% compared with 0.5 mu m thickness waveguide. These simulation results provide a theoretical basis for the design of Yb-Er co-doped Al2O3 waveguide amplifiers.