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测试参数对掺As ZnO微米线光致发光谱的影响

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Indexed by:期刊论文

Date of Publication:2014-11-03

Journal:半导体技术

Included Journals:PKU、ISTIC、CSCD

Volume:39

Issue:11

Page Number:867-871,877

ISSN No.:1003-353X

Key Words:氧化锌;水热法;光致发光;曝光时间;狭缝

Abstract:光致发光谱是发光材料在特定光源照射下发出的不同波长光的强度分布,可广泛应用于材料的光学及掺杂特性研究领域,是一种非破坏性的测试技术.利用水热法生长了ZnO微米线,用闭管热扩散方法进行了掺As处理,获得掺As的ZnO微米线,并对掺As的ZnO微米线进行光致发光谱测试.通过改变两个测试参数:CCD探测器的曝光时间及光入射狭缝的宽度,研究这两个参数的变化对测试谱线的影响.测试结果表明只有在适合的曝光时间及狭缝宽度时才能较充分地反映材料的特性.

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