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Indexed by:期刊论文

Date of Publication:2013-11-01

Journal:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Included Journals:SCIE、EI、Scopus

Volume:24

Issue:11

Page Number:4433-4438

ISSN No.:0957-4522

Abstract:Wafer-scale high density aligned p-type silicon nanowire (SiNW) arrays decorated with discrete platinum nanoparticles (PtNPs) have been fabricated by metal assisted electroless etching followed by an electroless platinum deposition process, and systematic investigations of photoelectrochemical behavior of Pt/SiNW were also reported in this study. Coating of PtNPs on SiNW sidewalls yielded a more positive onset potential (Vos), which enhances the photoelectrochemical hydrogen generation performance of the photoelectrodes, though excessive PtNPs deposition leads to a decreased photocurrent. Additionally, we have demonstrated that the photoelectrode consisting of longer SiNWs yielded a higher limiting current. However, when the length of SiNWs was increased further to > 4 mu m, the limiting current dramatically reduced, which is presumably because an increased interface recombination and scattering resulting from the increased surface area of SiNWs begin to play a dominant role. The results demonstrate Pt/SiNW to be a promising hybrid system for photoelectrochemical water splitting, and device performance may be further improved via optimal conditions of PtNPs deposition time and SiNWs length.