Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2013-02-15

Journal: MATERIALS LETTERS

Included Journals: EI、SCIE

Volume: 93

Page Number: 165-168

ISSN: 0167-577X

Key Words: Graphene; Chemical vapor deposition; Raman; Segregation

Abstract: In this paper, the synthesis of high quality graphene on single-crystal Mo(110) films by chemical vapor deposition (CVD) of methane was reported for the first time. X-ray diffraction proves that carbon species had dissolved into the metal. The micro-Raman spectroscopy indicates that the thickness of Mo films, cooling rate and growing time play significant roles in the quality of as-grown graphene films. By optimizing the growth time (15 min) and cooling rate (10 degrees C/s), we achieved high quality graphene films with the small ratio I-G/I-2D approximate to 0.26 and the FWHM(2D) approximate to 30.4 cm(-1) on 200 nm-thick Mo films. Our experiments also suggest that graphene growth on Mo is a dissolution and segregation process as Ni. (C) 2012 Elsevier B.V. All rights reserved.