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Indexed by:期刊论文

Date of Publication:2013-02-15

Journal:MATERIALS LETTERS

Included Journals:SCIE、EI

Volume:93

Page Number:165-168

ISSN No.:0167-577X

Key Words:Graphene; Chemical vapor deposition; Raman; Segregation

Abstract:In this paper, the synthesis of high quality graphene on single-crystal Mo(110) films by chemical vapor deposition (CVD) of methane was reported for the first time. X-ray diffraction proves that carbon species had dissolved into the metal. The micro-Raman spectroscopy indicates that the thickness of Mo films, cooling rate and growing time play significant roles in the quality of as-grown graphene films. By optimizing the growth time (15 min) and cooling rate (10 degrees C/s), we achieved high quality graphene films with the small ratio I-G/I-2D approximate to 0.26 and the FWHM(2D) approximate to 30.4 cm(-1) on 200 nm-thick Mo films. Our experiments also suggest that graphene growth on Mo is a dissolution and segregation process as Ni. (C) 2012 Elsevier B.V. All rights reserved.