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Indexed by:期刊论文

Date of Publication:2011-03-15

Journal:APPLIED SURFACE SCIENCE

Included Journals:SCIE、EI

Volume:257

Issue:11

Page Number:5121-5124

ISSN No.:0169-4332

Key Words:Sb-doped ZnO; Pulsed laser deposition; Hall-effect-measurement; X-ray diffraction; Scan electronic microscopy; Photoluminescence spectra

Abstract:Influence of annealing temperature on the properties of Sb-doped ZnO thin films were studied. Hall measurement results indicated that the Sb-doped ZnO annealed at 950 degrees C was p-type conductivity. X-ray diffraction (XRD) results indicated that the Sb-doped ZnO thin films prepared at the experiments are high c-axis oriented. It was worth noting that p-type sample had the worst crystallinity. The measurements of low-temperature photoluminescence (PL) spectra indicate that the sample annealed at the temperatures of 950 degrees C showed strong acceptor-bound exciton (A(0)X) emission, and confirmed that it is related to Sb-doping by comparing with the undoped ZnO low-temperature PL spectrum. (C) 2011 Elsevier B.V. All rights reserved.