期刊论文

Yu, D. Q.

Zhang, HQ (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China.

Wang, B.,Hu, L. Z.,Li, J.,Hu, H.,Zhang, H. Q.,Bian, J. M.,Zhu, J. X.,Qiao, S. S.,Chen, X.

2009-02-01

APPLIED SURFACE SCIENCE

SCIE、EI、Scopus

J

255

8

4430-4433

0169-4332

ZnO; Nanoneedle arrays; Photoluminescence; Phosphorus-doped

Phosphorus-doped ZnO nanoneedle arrays were prepared by phosphorus diffusion from InP substrate using a pulsed laser deposition (PLD) technique. The optical properties of ZnO nanoneedle were investigated by photoluminescence (PL) spectroscopy. Low-temperature photoluminescence spectrum measurements exhibited five acceptor-related emission peaks. The excitation intensity and temperature dependent photoluminescence spectra confirmed that the emission peaks corresponded to neutral-acceptor bound exciton, free electron to acceptor, donor-acceptor pairs, and their first and second photon replicas transitions. Acceptor-binding energy was determined to be 135-167 meV, which agrees well with the best-fitting result of the temperature dependent photoluminescence measurements and is reasonable in terms of theoretic prediction in ZnO. (C) 2008 Elsevier B. V. All rights reserved.