NAME

胡礼中

Paper Publications

Photoluminescence investigation of ZnO:P nanoneedle arrays on InP substrate by pulsed laser deposition
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  • Indexed by:

    期刊论文

  • First Author:

    Yu, D. Q.

  • Correspondence Author:

    Zhang, HQ (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China.

  • Co-author:

    Wang, B.,Hu, L. Z.,Li, J.,Hu, H.,Zhang, H. Q.,Bian, J. M.,Zhu, J. X.,Qiao, S. S.,Chen, X.

  • Date of Publication:

    2009-02-01

  • Journal:

    APPLIED SURFACE SCIENCE

  • Included Journals:

    SCIE、EI、Scopus

  • Document Type:

    J

  • Volume:

    255

  • Issue:

    8

  • Page Number:

    4430-4433

  • ISSN No.:

    0169-4332

  • Key Words:

    ZnO; Nanoneedle arrays; Photoluminescence; Phosphorus-doped

  • Abstract:

    Phosphorus-doped ZnO nanoneedle arrays were prepared by phosphorus diffusion from InP substrate using a pulsed laser deposition (PLD) technique. The optical properties of ZnO nanoneedle were investigated by photoluminescence (PL) spectroscopy. Low-temperature photoluminescence spectrum measurements exhibited five acceptor-related emission peaks. The excitation intensity and temperature dependent photoluminescence spectra confirmed that the emission peaks corresponded to neutral-acceptor bound exciton, free electron to acceptor, donor-acceptor pairs, and their first and second photon replicas transitions. Acceptor-binding energy was determined to be 135-167 meV, which agrees well with the best-fitting result of the temperature dependent photoluminescence measurements and is reasonable in terms of theoretic prediction in ZnO. (C) 2008 Elsevier B. V. All rights reserved.

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