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Effect of oxygen pressure on the structural and optical properties of ZnO thin films on Si (111) by PLD

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Indexed by:期刊论文

Date of Publication:2009-01-01

Journal:VACUUM

Included Journals:SCIE、EI

Volume:83

Issue:5

Page Number:906-909

ISSN No.:0042-207X

Key Words:Oxygen pressure; UV emission; Pulsed laser deposition; ZnO thin films

Abstract:ZnO thin films were grown on Si (111) substrates by pulsed laser deposition (PLD) at various oxygen pressures in order to investigate the structural and optical properties of the films. The optical properties of the films were studied by photoluminescence spectra using a 325 nm He-Cd laser. The structural and morphological properties of the films were investigated by XRD and AFM measurements, respectively. The results suggest that films grown at 20 Pa and 50 Pa have excellent UV emission and high-quality crystallinity. The research of PL spectra indicates that UV emission is due to excitonic combination, the green band is due to the replacing of Zn in the crystal lattice for O and the blue band is due to the O vacancies. (C) 2008 Elsevier Ltd. All rights reserved.

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