Release Time:2019-03-10  Hits:

Indexed by: Journal Article

Date of Publication: 2008-09-01

Journal: CHINESE PHYSICS LETTERS

Included Journals: Scopus、ISTIC、SCIE

Volume: 25

Issue: 9

Page Number: 3400-3402

ISSN: 0256-307X

Abstract: The N-Ag codoped ZnO films are deposited on quartz glass substrates by ultrasonic spray pyrolysis technology. The results indicate that the p-type conductivity in ZnO films is greatly enhanced by the double acceptor codoping of N and Ag compared with that of Ag- and N- monodoped ZnO films, and the N- Ag codoped low-resistivity p-type ZnO films with the resistivity of 1.05 Omega.cm, relatively high carrier concentration of 5.43 x 10(17) cm(-3), and Hall mobility of 10.09 cm(2) V-1 s(-1) are obtained under optimized conditions. This achievement confirms that p-type ZnO with acceptable properties for optoelectronic applications could be realized by simultaneous codoping with two potential acceptors.