Release Time:2019-03-10  Hits:

Indexed by: Journal Article

Date of Publication: 2007-01-01

Journal: 无机材料学报

Included Journals: CSCD、ISTIC、PKU、EI、SCIE

Volume: 22

Issue: 1

Page Number: 173-175

ISSN: 1000-324X

Key Words: ZnO薄膜;同质p-n结;电致发光;超声喷雾热分解

Abstract: 采用超声喷雾热解法在单晶GaAs(100)衬底上生长ZnO同质p-n结.以醋酸锌水溶液为前驱体,分别以醋酸铵和硝酸铟为氮(N)源和铟(In)源,通过氮-铟(N-In)共掺杂沉积p型ZnO薄膜,以未故意掺杂的ZnO薄膜做为n型层获得ZnO基同质p-n结.采用热蒸发工艺在ZnO层和GaAs衬底上分别蒸镀Zn/Au和Au/Ge/Ni电极而获得发光二极管原型器件,在室温下发现了该器件正向电流注入下的连续发光现象.