Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM
Release Time:2024-01-22 Hits:
Date of Publication:2022-10-07
Journal:APPLIED SURFACE SCIENCE
Volume:560
ISSN:0169-4332
Key Words:"Ta2O5 RRAM; Si dopant; Oxygen vacancy; Conductive filament; First principle"