Oxygen vacancy formation and uniformity of conductive filaments in Si-doped Ta2O5 RRAM
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发表时间:2022-10-07
发表刊物:APPLIED SURFACE SCIENCE
卷号:560
ISSN号:0169-4332
关键字:"Ta2O5 RRAM; Si dopant; Oxygen vacancy; Conductive filament; First principle"
点击次数:
发表时间:2022-10-07
发表刊物:APPLIED SURFACE SCIENCE
卷号:560
ISSN号:0169-4332
关键字:"Ta2O5 RRAM; Si dopant; Oxygen vacancy; Conductive filament; First principle"