Release Time:2019-03-11  Hits:

Indexed by: Conference Paper

Date of Publication: 2009-10-25

Included Journals: Scopus、CPCI-S、EI

Page Number: 1030-+

Abstract: The dielectrostriction effect of thermal SiO2 was experimentally studied in this paper. A beam bending method was used to apply mechanical stresses on the dielectric and the dielectric constant was characterized by the capacitance of a sandwich structure. A model for extracting the dielectrostriction coefficient, M-12, was developed and special samples for the measurements were fabricated. According to the measurements the dielectrostriction coefficient, M-12, of thermal SiO2 is -0.19 +/- 0.01x10(-21)m(2)/V-2.