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Indexed by:期刊论文

Date of Publication:2010-12-01

Journal:JOURNAL OF MICROELECTROMECHANICAL SYSTEMS

Included Journals:EI、SCIE、Scopus

Volume:19

Issue:6

Page Number:1521-1523

ISSN No.:1057-7157

Key Words:Dielectric constant; mechanical stress; micromachining; silicon dioxide; test structure

Abstract:The effect of mechanical stress on the dielectric constant of SiO(2) is experimentally studied. A beam-bending method is used to extract the strain effect coefficient M(12). According to the measurements, the dielectric constant changes linearly with the stress. The value of M(12) is shown to be -(0.19 +/- 0.01) x 10(-21) m(2)/V(2). The mechanism underlying the phenomena is discussed.