Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2009-08-23

Journal: FERROELECTRICS

Included Journals: Scopus、EI、SCIE

Volume: 405

Issue: 1

Page Number: 255-261

ISSN: 0015-0193

Key Words: PSZT thin films; Sr-doped; dielectric properties; leakage current; P-E hysteresis loops

Abstract: Pb1-xSrx (Zr0.53Ti0.47) O3 (PSZT) thin films with different x values (x= 0, 0.02, 0.04, 0.06) are prepared by sol-gel method and their properties are studied. All PSZT thin films get a single perovskite phase. The dielectric properties are studied. The leakage current density at an applied electric field of 61.2 kV/cm is 293.0 x 10-9A/cm2 when x= 0.04. The remanent polarization and coercive field values of the PSZT (x = 0) thin film are 8.4C/cm2 and 67.5kV/cm, respectively.