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Indexed by:期刊论文

Date of Publication:2009-08-23

Journal:FERROELECTRICS

Included Journals:SCIE、EI、Scopus

Volume:405

Issue:1

Page Number:255-261

ISSN No.:0015-0193

Key Words:PSZT thin films; Sr-doped; dielectric properties; leakage current; P-E hysteresis loops

Abstract:Pb1-xSrx (Zr0.53Ti0.47) O3 (PSZT) thin films with different x values (x= 0, 0.02, 0.04, 0.06) are prepared by sol-gel method and their properties are studied. All PSZT thin films get a single perovskite phase. The dielectric properties are studied. The leakage current density at an applied electric field of 61.2 kV/cm is 293.0 x 10-9A/cm2 when x= 0.04. The remanent polarization and coercive field values of the PSZT (x = 0) thin film are 8.4C/cm2 and 67.5kV/cm, respectively.