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Ar/H_2/SiCl_4大气压射频等离子体射流的光谱诊断

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Indexed by:会议论文

Date of Publication:2009-07-20

Page Number:1

Key Words:等离子体射流;Ar/H_2/SiCl_4;等离子体参数;多晶硅薄膜;沉积薄膜;反应气体;沉积工艺;硅原子;放电功率;气体放电;

Abstract:多晶硅薄膜太阳能电池所用多晶硅薄膜的沉积工艺备受关注。以SiCl_4和H_2为反应气体,Ar为载气,利用大气压射频等离子体射流辅助沉积多晶硅薄膜是一种崭新的方法。科学地诊断用于沉积薄膜的等离子体参数可以为沉积工作提供有力的支持。

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