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论文类型：会议论文

发表时间：2010-06-26

收录刊物：EI、CPCI-S、Scopus

卷号：675-677

页面范围：521-+

关键字：High-intensity pulsed ion beam; simulation; hard film; irradiation

摘要：Surface treatment of hard nitride film with high-intensity pulsed ion beam (HIPIB) was investigated in the present research. On considering the high energy density and short pulse duration of HIPIB source, a one-dimension physical model was built according to the structure feature of film-base sample. It was found that the irradiation of HIPIB lead to a very fast thermal recycle of heating rate 10(11)K/s and cooling rate up to 10(10)K/s. The highest temperature located at the surface of film irradiated. When using the HIPIB parameters of accelerating voltage 350kV, pulse duration 70ns and current density 60A/cm(2), the surface layer of film would be melt with depth of about 0.35 mu m, that was verified by the experimental result along with the grain refinement effect due to the fast solidification process.