Release Time:2020-02-12  Hits:

Indexed by: Conference Paper

Date of Publication: 2007-11-05

Included Journals: CPCI-S、EI

Volume: 561-565

Issue: PART 2

Page Number: 1161-1164

Key Words: beta-FeSi2; magnetron sputtering; TEM; semiconductor; metallic silicide

Abstract: Fe/Si multi-layer films were fabricated on Si (100) substrates utilizing radio frequency magnetron sputtering system. Si/beta-FeSi2 structure was found in the films after the deposition. Structural characterization of Fe-silicide sample was performed by transmission electron microscopy, to explore the dependence of the microstructure of beta-FeSi2 film on the preparation parameters. It was found that beta-FeSi2 particles were formed after the deposition without annealing, whose size is less than 20nm with a direct band-gap of 0.94eV in room temperature. After annealing at 850 degrees C, particles grow lager, however the stability of thin films was still good.