Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2014-04-15

Journal: SURFACE & COATINGS TECHNOLOGY

Included Journals: Scopus、EI、SCIE

Volume: 244

Page Number: 9-14

ISSN: 0257-8972

Key Words: Cu interconnects; Carbon doping; Thin film

Abstract: It was previously known that C-doping in Cu effectively enhances the film thermal stability and maintains a low electrical resistivity even upon high-temperature annealing, via a diffusion inhibiting the mechanism of C-stabilized oxide interlayer between Cu and Si. In the present work, the stability and resistivity are investigated in two Cu films doped with more C, respectively 2.9 at.% and 4.2 at.% as measured by EPMA. As expected, the thermal stability is even further enhanced, without significantly affecting the resistivity. After a systematic microstructural investigation by TEM, it is revealed that the relevant mechanism lies both in the enhanced stability via C dissolution in the silica native oxide layer at the Cu/Si interface and in the C-passivated Si surface zone beneath the layer. In the 4.2% C film, the Cu/Si interaction is mainly inhibited by self-forming SiC nano-particles and the resistivity remains below 3 u Omega.cm even upon annealing at 500 degrees C for 40 h. The C-doping can then be a simple process route towards manufacturing stable Cu interconnects. (C) 2014 Elsevier B.V. All rights reserved.