thq4gG3kFlMfTVzi2vkB3IZDy3suuE4jZgDWeI5W5B9vJBeuMv5H6EknUEia
Current position: Home >> Scientific Research >> Patents

低电阻率高热稳定性的Cu-Ni-Mo合金薄膜及其制备工艺

Release Time:2019-03-25  Hits:

First Author: 李晓娜

Disigner of the Invention: 董闯,王清,朱瑾,张心怡

Authorization Number: ZL 201080067138.3

Prev One:一种可变带隙的Fe-B-Si三元半导体非晶薄膜及其制备方法

Next One:一种稳定的高电导Cu-Ge-Fe三元稀合金薄膜及其制备工艺
Recommended Ph.D.Supervisor Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep