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论文类型：期刊论文

发表时间：2011-06-15

发表刊物：APPLIED SURFACE SCIENCE

收录刊物：SCIE、EI

卷号：257

期号：17

页面范围：7714-7718

ISSN号：0169-4332

关键字：Graphene; Silicon; Interface; Anneal; Photoelectrochemical Stability

摘要：The graphene (Gr)/Si electrodes were fabricated by electrophoresis method and then following an annealing process. The p-Si surface was found to be covered completely with successive and transparent Gr sheets, and thus the impairment of aqueous solution on the photoelectrochemical capability of silicon could be avoided. This annealing process was a key process for improving the adhesion of Gr/Si interface. After annealing at 400 degrees C, the Gr/Si electrodes displayed high photoresponse ability and high stability in aqueous solution. The carriers transfer between Gr and Si is discussed on the basis of the semiconductor energy band theory. The results demonstrated that the Gr/Si electrodes would be a promising candidate as solar energy materials using in aqueous solution. (C) 2011 Elsevier B. V. All rights reserved.