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论文类型：期刊论文

发表时间：2010-03-01

发表刊物：DESALINATION

收录刊物：SCIE、EI

卷号：252

期号：1-3

页面范围：143-148

ISSN号：0011-9164

关键字：Titania; Silicon; Doped; Chemical vapor deposition; Photoelectrochemical capability

摘要：Silicon-doped TiO(2) nanofilm was fabricated by chemical vapor deposition which can control the Si-doping amount well and obtain the rapid deposition of film. The results of X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses revealed that the introduced silicon might be incorporated into titania matrix. This incorporation helped to increase the thermal stability of titania, which was in favor of suppressing phase transformation from anatase to rutile and also inhibiting the growth of anatase crystallite at high calcination temperature. A significant blue-shift with enhanced absorption intensities was observed in the spectrum of UV absorption for Si-doped sample. The Si-doped sample with 5 mol % of silicon exhibited the best photoelectrochemical property, and its photocurrent density under UV light was 1.7 times that of TiO(2) nanofilm. The photocatalytic (PC) and electro-assisted photocatalytic (EAPC) activities were investigated using phenol as a probe substance. Compared with TiO(2) nanofilm, the Si-doped TiO(2) showed better PC and EAPC capabilities in the degradation of phenol under UV-light irradiation. The kinetic constants of phenol degradation for the 5 mol%-Si-doped TiO(2) in PC and EAPC processes under UV-light irradiation were 1.3 and 1.8 times as great as the values for the undoped TiO(2) nanofilm. (C) 2009 Elsevier B.V. All rights reserved.