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Influence of initial current density on bonding strength between Ni layer and Cu substrate in microelectroforming

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Indexed by:Journal Papers

Date of Publication:2016-09-16

Journal:JOURNAL OF ADHESION SCIENCE AND TECHNOLOGY

Included Journals:SCIE、EI、Scopus

Volume:30

Issue:18

Page Number:2013-2023

ISSN No.:0169-4243

Key Words:Oxygen content; current density; electrochemical activation; bonding strength; microelectroforming

Abstract:Microelectroforming is a metal fabrication process that is indispensable in producing many microstructures in microelectromechanical systems. The relation of oxygen content to current density at the interface of nickel electroformed layer and copper substrate was explored in order to enhance the bonding strength of microstructures. The oxygen content was investigated with deep etching and X-ray photoelectron spectroscopy from the surface of electroformed layer to substrate vertically. A scratch tester was utilized to acquire the bonding strength between electroformed layer and substrate. The results reveal that the oxide film upon the substrate surface can be reduced while current density ranges from 0.3 A/dm(2) to 1.0 A/dm(2) at the initial stage of electroformed nickel upon the copper substrate. The decrease of oxygen content at the interface results in electrochemical activation upon the surface of substrate. The bonding performance of the electroformed layer to the copper substrate is improved. While current density equals 0.5 A/dm(2), the surface of substrate becomes optimal electrochemical activation, and the bonding strength at the interface is the largest.

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