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Indexed by:期刊论文

Date of Publication:2008-01-31

Journal:International Conference on Functional Materials and Devices

Included Journals:SCIE、EI、CPCI-S

Volume:449

Issue:1-2

Page Number:44-47

ISSN No.:0925-8388

Key Words:ZnO; Mn-doped; annealing temperature; c-axis orientation; resistivity

Abstract:The Mn-doped ZnO piezoelectric films were prepared by sol-gel method. The ZnO films with perfect c-axis orientation were obtained in the annealing temperature range of 470-700 degrees C when 1% Mn ion (molar percent) was doped into precursor sol. The resistivity of the ZnO films annealed at 600 degrees C increased from 800 Omega cm (undoped) to 2 x 10(7) Omega cm (1% Mn-doped). The XPS spectra of Mn-doped ZnO films were analysed. (C) 2006 Elsevier B.V. All rights reserved.