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论文类型：期刊论文

发表时间：2008-01-31

发表刊物：International Conference on Functional Materials and Devices

收录刊物：SCIE、EI、CPCI-S

卷号：449

期号：1-2

页面范围：44-47

ISSN号：0925-8388

关键字：ZnO; Mn-doped; annealing temperature; c-axis orientation; resistivity

摘要：The Mn-doped ZnO piezoelectric films were prepared by sol-gel method. The ZnO films with perfect c-axis orientation were obtained in the annealing temperature range of 470-700 degrees C when 1% Mn ion (molar percent) was doped into precursor sol. The resistivity of the ZnO films annealed at 600 degrees C increased from 800 Omega cm (undoped) to 2 x 10(7) Omega cm (1% Mn-doped). The XPS spectra of Mn-doped ZnO films were analysed. (C) 2006 Elsevier B.V. All rights reserved.