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论文类型：期刊论文

发表时间：2007-12-01

发表刊物：2nd International Symposium on Functional Materials

收录刊物：SCIE、EI、CPCI-S、Scopus

卷号：T129

页面范围：149-152

ISSN号：0031-8949

摘要：Li+- doped zinc oxide (ZnO) piezoelectric thin films with preferred c-axis orientation along ( 002) were fabricated by the sol-gel method. The doping sources of Li+ were LiCl, Li2CO3 and their mixtures (LiCl + Li2CO3). Effects of the three doping sources and annealing temperature on the characteristics of preferred c-axis orientation degree and resistivity of ZnO films were investigated. It was found that the annealing temperature at which the ZnO film had good preferred c-axis orientation decreased from 600 to 550 degrees C. The increase in ZnO resistivity by doping LiCl was larger than that by doping Li2CO3. The mixed-doped ( 5% LiCl + 5% Li2CO3) ZnO film had good preferred c-axis orientation when annealed both at 550 and 600 degrees C. The values of resistivity of the mixed-doped ZnO films were found to be 3 x 10(8) and 2 x 10(7) Omega cm with annealing temperatures at 550 and 600 degrees C, respectively.