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论文类型：期刊论文

第一作者：Shao, Chunyu

通讯作者：Wang, J (reprint author), Dalian Univ Technol, Sch Elect & Informat Engn, Dalian 116023, Peoples R China.

合写作者：Wang, Jing,Dong, Weijie,Cui, Yan,Ji, Min

发表时间：2008-02-01

发表刊物：2nd International Symposium on Functional Materials

收录刊物：SCIE、CPCI-S

卷号：15

期号：1-2

页面范围：1-5

ISSN号：0218-625X

关键字：PZT film; Eu doped; ferroelectric; leakage current

摘要：Samples of lead zirconate titanate Pb(Zr0.53Ti0.47)O-3 with europium (Eu) doping concentration of 0, 0.5, 1.5, 3mol% (PEZT) were fabricated by sol-gel method. XRD spectra showed that the introduction of Eu into PZT favored the growth of (100) orientation. With 3% Eu content, the preferential orientation of the film converted from (111) to (100) orientation. The Eu-doped PZT films exhibited lower leakage current less than 10(-9) A/cm(2) and the behavior of leakage current was discussed in terms of defect chemistry theorem. When Eu content was 1.5%, the remanent polarization (P-r) increased to 28 mu C/cm(2) which was much higher than that of undoped PZT film.