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论文类型：期刊论文

发表时间：2007-02-26

发表刊物：5th Asian/European International Conference on Plasma Surface Engineering

收录刊物：SCIE、EI、CPCI-S

卷号：201

期号：9-11

页面范围：5422-5426

ISSN号：0257-8972

关键字：ZnO films; magnetron sputtering; morphology; interface; growth

摘要：Highly c-axis oriented ZnO films have been deposited onto Si (100) substrates at room temperature (RT) and 750 degrees C using radio-frequency reactive magnetron sputtering. The films have been characterized with X-ray diffraction, atomic force microscopy, and transmission electron microscopy (TEM). It is found that the film deposited at RT has grains with a regular shape while the grains show an irregular shape at 750 degrees C. Both of the films deposited at RT and 750 degrees C have a crystallographic orientation relationship with the Si substrate, [110](Si)//[100](ZnO) and (001)(Si)// (001)(ZnO) with a deviation angle below 3 degrees. Cross-sectional TEM images reveal that both of the ZnO films deposited at RT and 750 degrees C are composed of two layers. The first layer is a ZnO transition layer on the Si substrate and the second is a high c-axis oriented layer above the transition layer. The effects of substrate temperature on the growth behavior of ZnO films are discussed. (C) 2006 Elsevier B.V. All rights reserved.