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个人信息Personal Information
教授
博士生导师
硕士生导师
任职 : 国际磨粒技术学会（International Committee of Abrasive Technology, ICAT）委员，中国机械工程学会极端制造分会副主任、生产工程分会常务委员、微纳米制造技术分会常务委员，中国机械工程学会生产工程分会磨粒加工技术专业委员会副主任、切削加工专业委员会常委委员、精密工程与微纳技术专业委员会常委委员，中国机械工程学会特种加工分会超声加工技术委员会副主任，中国机械工程学会摩擦学分会微纳制造摩擦学专业委员会常务委员，中国机械工业金属切削刀具协会切削先进制造技术研究会常务理事、对外学术交流工作委员会副主任、切削先进制造技术研究会自动化加工技术与系统委员会副主任。
性别：男
毕业院校：西北工业大学
学位：博士
所在单位：机械工程学院
学科：机械制造及其自动化. 机械电子工程. 航空宇航制造工程
办公地点：机械工程学院7191
电子邮箱：kangrk@dlut.edu.cn
Nanoscale Wear Layers on Silicon Wafers Induced by Mechanical Chemical Grinding
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论文类型：期刊论文
发表时间：2017-12-01
发表刊物：TRIBOLOGY LETTERS
收录刊物：SCIE、EI
卷号：65
期号：4
ISSN号：1023-8883
关键字：Silicon; Nanoscale; Wear; Transmission electron microscopy; Grinding
摘要：Two types of diamond wheel with a mesh size of 20,000 are developed. A novel approach for mechanical chemical grinding (MCG) is proposed using the diamond wheels developed. A wear layer of 56 nm in thickness is obtained on a silicon wafer, which is ground by the diamond wheel with ceria at a feed rate of 20 mu m/min. It consists of an amorphous layer at the top and a damage crystalline layer beneath. The thickness of the wear layer is less than one third those ground using a conventional diamond wheel with a mesh size of 3000. Surface roughness Ra and peak-to-valley values keep basically constant at 1 and 9.8 nm, respectively, with increasing feed rates from 5 to 20 mu m/min, which is ground by the diamond wheel with ceria. Nanoscale wear layers are obtained on Si wafers ground by MCG in high efficiency, which is different from the traditional diamond grinding with thick wear layers and chemical mechanical grinding with low efficiency. The ground Si wafers are bright and absent of cracks. MCG paves the way for the applications in semiconductor and electronics industries.