论文成果
Study on adhesion removal model in CMP SiO(2) ILD
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- 论文类型：会议论文
- 发表时间：2009-01-01
- 收录刊物：CPCI-S
- 文献类型：A
- 卷号：389-390
- 页面范围：475-480
- 关键字：Silicon dioxide; Chemical-Mechanical Polishing (CMP); Slurry; adhesion
removal
- 摘要：In the process of CMP SiO(2) ILD, the nano-particle with high surface energy in slurry has an essential impact on the efficiency and quality of CMP. In this paper the mode of nano-particle on the surface of SiO(2) ILD is analysed and adhesion removal model corresponding to that is established. Through cycle polishing experiments, the change of nano-particle size and the state of particle surface before and after polishing is observed with TEM and Zeta potential analyzer, based on which the adhesion removal model is verified.
