|
个人信息Personal Information
教授
博士生导师
硕士生导师
任职 : 国际磨粒技术学会（International Committee of Abrasive Technology, ICAT）委员，中国机械工程学会极端制造分会副主任、生产工程分会常务委员、微纳米制造技术分会常务委员，中国机械工程学会生产工程分会磨粒加工技术专业委员会副主任、切削加工专业委员会常委委员、精密工程与微纳技术专业委员会常委委员，中国机械工程学会特种加工分会超声加工技术委员会副主任，中国机械工程学会摩擦学分会微纳制造摩擦学专业委员会常务委员，中国机械工业金属切削刀具协会切削先进制造技术研究会常务理事、对外学术交流工作委员会副主任、切削先进制造技术研究会自动化加工技术与系统委员会副主任。
性别：男
毕业院校：西北工业大学
学位：博士
所在单位：机械工程学院
学科：机械制造及其自动化. 机械电子工程. 航空宇航制造工程
办公地点：机械工程学院7191
电子邮箱：kangrk@dlut.edu.cn
Study on subsurface damage model of the ground monocrystallinge silicon wafers
点击次数：
论文类型：期刊论文
发表时间：2009-01-01
发表刊物：Key Engineering Materials
收录刊物：EI、CPCI-S、Scopus
卷号：416
页面范围：66-70
ISSN号：10139826
关键字：Silicon wafer; Grinding; Subsurface damage model
摘要：In order to better understand the grinding mechanism, the rough, semi-fine and fine ground silicon wafer subsurface damage models are experimentally investigated with the aid of advanced measurement methods. The results show that the rough ground wafer subsurface damage model is composed of large quantity of microcracks with complicated configurations, high density dislocations, stalk faults and elastic deformation layer. Among them microcracks, dislocations and stalk faults are dominant. Apart from the above damage, the amorphous layer and polycrystalline layer (Si-I, Si-III, Si-IV and Si-XII) exist in the semi-fine ground and fine ground wafer subsurface damage models. The amorphous layer depth firstly increases from rough grinding to semi-fine grinding and then decreases from semi-fine grinding to fine grinding. The damage model can be divided in severe damage part and elastic deformation part with high stress. When the material is removed by ductile mode two parts are all small and the ratio of second part is relatively great. © (2009) Trans Tech Publications, Switzerland.