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个人信息Personal Information
教授
博士生导师
硕士生导师
任职 : 国际磨粒技术学会（International Committee of Abrasive Technology, ICAT）委员，中国机械工程学会极端制造分会副主任、生产工程分会常务委员、微纳米制造技术分会常务委员，中国机械工程学会生产工程分会磨粒加工技术专业委员会副主任、切削加工专业委员会常委委员、精密工程与微纳技术专业委员会常委委员，中国机械工程学会特种加工分会超声加工技术委员会副主任，中国机械工程学会摩擦学分会微纳制造摩擦学专业委员会常务委员，中国机械工业金属切削刀具协会切削先进制造技术研究会常务理事、对外学术交流工作委员会副主任、切削先进制造技术研究会自动化加工技术与系统委员会副主任。
性别：男
毕业院校：西北工业大学
学位：博士
所在单位：机械工程学院
学科：机械制造及其自动化. 机械电子工程. 航空宇航制造工程
办公地点：机械工程学院7191
电子邮箱：kangrk@dlut.edu.cn
A method to improve uniformity of material removal of chemical mechanical polishing in LCOS process
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论文类型：会议论文
发表时间：2008-01-01
收录刊物：EI
卷号：364-366 II
页面范围：686-689
摘要：LCOS panel as a kind of new LCD is a sort of liquid crystal display device that operates in a reflective mode. In this paper, a method on realising planarization in large scale liquid crystal on silicon with chemical mechanical polishing (CMP) technology is discussed in detail. The non-uniform distributions of polishing pressure and the relative speed between the wafer and the polishing pad are main factors affecting the within-wafer non-uniformity. This research integrated a physical mixed model of chemical-mechanical polishing that combineed the effects of polishing pad roughness and slurry hydrodynamic pressure. Based on the contact mechanics and modified Reynolds equation, the asperity contact and fluid flow pressures were calculated. Taking into account the effects of kinematic parameters, the material removal rate(MRR) on silicon panel front surface was obtained. In the last section the design of a schematic carrier with multi-zone, in which the compensation back pressure can be applied, is presented. The model and the design can be used for providing theoretical guide to the development of CMP equipments and selection of the kinematic variables in CMP process.