康仁科

个人信息Personal Information

教授

博士生导师

硕士生导师

任职 : 国际磨粒技术学会(International Committee of Abrasive Technology, ICAT)委员,中国机械工程学会极端制造分会副主任、生产工程分会常务委员、微纳米制造技术分会常务委员,中国机械工程学会生产工程分会磨粒加工技术专业委员会副主任、切削加工专业委员会常委委员、精密工程与微纳技术专业委员会常委委员,中国机械工程学会特种加工分会超声加工技术委员会副主任,中国机械工程学会摩擦学分会微纳制造摩擦学专业委员会常务委员,中国机械工业金属切削刀具协会切削先进制造技术研究会常务理事、对外学术交流工作委员会副主任、切削先进制造技术研究会自动化加工技术与系统委员会副主任。

性别:男

毕业院校:西北工业大学

学位:博士

所在单位:机械工程学院

学科:机械制造及其自动化. 机械电子工程. 航空宇航制造工程

办公地点:机械工程学院7191

电子邮箱:kangrk@dlut.edu.cn

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A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors

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论文类型:期刊论文

发表时间:2016-03-01

发表刊物:SCIENTIFIC REPORTS

收录刊物:SCIE、PubMed

卷号:6

页面范围:22466

ISSN号:2045-2322

摘要:A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2 nanospheres, H2O2, and malic and citric acids, which are different from previous CMP slurries, in which corrosive and toxic chemical reagents are usually employed. Finally, the polished MCT wafers are cleaned and dried by deionized water and compressed air, respectively. The novel approach of CMP is environment-friendly. Surface roughness R-a, and peak-to-valley (PV) values of 0.45, and 4.74 nm are achieved, respectively on MCT wafers after CMP. The first and second passivating processes are observed in electrochemical measurements on MCT wafers. The fundamental mechanisms of CMP are proposed according to the X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. Malic and citric acids dominate the first passivating process, and the CMP slurry governs the second process. Te4+ 3d peaks are absent after CMP induced by the developed CMP slurry, indicating the removing of oxidized films on MCT wafers, which is difficult to achieve using single H2O2 and malic and citric acids solutions.