Release Time:2019-03-12  Hits:

Indexed by: Journal Article

Date of Publication: 2009-01-01

Journal: Journal of Semiconductors

Included Journals: Scopus、CSCD、EI

Volume: 30

Issue: 10

Page Number: 59-62

ISSN: 1674-4926

Abstract: According to Lambert's law, a novel structure of photodetectors, namely photodetectors in silicon-on-insulator, is proposed. By choosing a certain thickness value for the SOI layer, the photodetector can absorb blue/violet light effectively and affect the responsivity of the long wavelength in the visible and near-infrared region, making a blue/violet filter unnecessary. The material of the SOI layer is high-resistivity floating-zone silicon which can cause the neutral N type SOI layer to become fully depleted after doping with a P type impurity. This can improve the collection efficiency of short-wavelength photogenerated carriers. The device structure was optimized through numerical simulation, and the results show that the photodiode is a kind of high performance photodetector in the blue/violet region. ? 2009 Chinese Institute of Electronics.