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Indexed by:期刊论文

Date of Publication:2010-12-13

Journal:APPLIED PHYSICS LETTERS

Included Journals:SCIE、EI、Scopus

Volume:97

Issue:24

ISSN No.:0003-6951

Abstract:This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3526725]