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论文类型：期刊论文

发表时间：2014-01-01

发表刊物：INTERNATIONAL JOURNAL OF POLYMER SCIENCE

收录刊物：SCIE、Scopus

卷号：2014

ISSN号：1687-9422

摘要：Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47)O-3 (PZT) thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm similar to 90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600 degrees C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.