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论文类型：期刊论文

发表时间：2010-01-01

发表刊物：SCIENCE CHINA-TECHNOLOGICAL SCIENCES

收录刊物：SCIE、EI

卷号：53

期号：1

页面范围：248-252

ISSN号：1674-7321

关键字：nanoimprint lithography; mold fabrication; electron beam lithography

摘要：The mold fabrication is a critical issue for the development of nanoimprint lithography as an effective low-cost and mass production process. This paper describes the fabrication process developed to fabricate the large area nanoimprint molds on the silicon wafers. The optimization of e-beam exposure dose and pattern design is presented. The overlayer process is developed to improve the field stitching accuracy of e-beam exposure, and around 10 nm field stitching accuracy is obtained. By means of the optimization of the e-beam exposure dose, pattern design and overlayer process, large area nanoimprint molds having dense line structures with around 10 nm field stitching accuracy have been fabricated. The fabricated mold was used to imprint commercial imprinting resist.